http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100440888-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1997-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94df5eb2fb5906622fc9cee57ba7d69b |
| publicationDate | 2004-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100440888-B1 |
| titleOfInvention | Etch Residue Removal Method in Platinum Etching Process |
| abstract | The present invention is to provide an etching residue removal method in the platinum etching process to prevent the pattern profile deformation of the plating in removing the etching residues generated after the platinum etching process, the present invention provides a nitrogen gas and argon gas After mixing to bring the particles to a low temperature and high pressure to form particles, the particles are blown onto a wafer to remove platinum etching residues by the expansion effect of the particles. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101648346-B1 |
| priorityDate | 1997-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.