http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100439048-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24 |
| filingDate | 2001-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100439048-B1 |
| titleOfInvention | Method of manufacturing a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, wherein a heat treatment process for forming a dose of arsenic and a cobalt silicide layer during an ion implantation process for forming a high concentration junction region of an NMOS in a cobalt silicide layer formation process of a semiconductor device By controlling the temperature at the time of controlling the formation of the abnormal oxide film in a specific region, it is possible to smoothly form the abnormal oxide film in an area where an abnormal oxide film is needed, and to improve the characteristics of the semiconductor device by restricting the formation of the abnormal oxide film in an area where the abnormal oxide film is unnecessary. A method of manufacturing a semiconductor device is provided. |
| priorityDate | 2001-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.