http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100436980-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-06546 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-04 |
| filingDate | 2002-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100436980-B1 |
| titleOfInvention | Method for manufacturing a NTC Thermistor of Thin Film type |
| abstract | The present invention relates to a method for manufacturing a YCrO 3 thin-film NTC thermistor, the step of measuring the amount of Y 2 O 3 and Cr 2 O 3 (S10), after calcining the metered Y 2 O 3 and Cr 2 O 3 , Drying step (S20), pressing and drying the dried Y 2 O 3 and Cr 2 O 3 using a mold, and then molding using hydrostatic pressure molding (S30), the molded Y 2 O 3 and Cr Sintering 2 O 3 to form YCrO 3 for deposition (S40), ultrasonically cleaning the thermally oxidized silicon wafer with acetone, methyl alcohol, and isopropyl alcohol, and then depositing YCrO 3 for high-frequency magnetron on the silicon wafer. Depositing the YCrO 3 thin film by sputtering (S50), post-heat-treating the YCrO 3 thin film deposited on the silicon wafer (S60), and using a mask on the heat-treated YCrO 3 thin film, platinum RF sputtering to deposit a platinum electrode (S70) comprising It is characterized by. |
| priorityDate | 2002-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.