http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100436220-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-302 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-30 |
filingDate | 2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2004-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2004-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100436220-B1 |
titleOfInvention | Organic polymers for bottom antireflective coating, processes for preparing the same, and compositions containing the same |
abstract | The present invention provides an isoflavone chromophore-containing copolymer for an antireflection film and a method for manufacturing the same, which can be used in an ultrafine circuit processing process using far ultraviolet rays when manufacturing a highly integrated semiconductor device, a bottom antireflection film composition containing the polymer, a bottom antireflection film using the same, and It relates to a manufacturing method thereof.n n n The bottom anti-reflective coating using the isoflavone chromophore-containing copolymer according to the present invention suppresses and removes inter-layer diffuse reflection and standing wave of circuits when used in the manufacture of highly integrated semiconductor devices of gigabit DRAMs of 64 megabit DRAM or more. It is possible to stably form a high-resolution microcircuit to increase the production yield of the semiconductor device. |
priorityDate | 2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.