http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100436173-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47B81-005
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-09
filingDate 2004-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100436173-B1
titleOfInvention Manufacturing method of monoammonium phosphate using the deserted liquid produced by semiconductor etching process
abstract The present invention relates to a method for producing monomonium phosphate (monoammonium phosphate) from the reaction waste solution by-produced in the semiconductor etching process, the semiconductor waste waste solution is purified to a phosphoric acid content of 70-80wt%, and then purified waste liquid Is adjusted to a specific gravity of 1.4-1.5, and ammonia is added to the equilibrium ratio of the equivalent stoichiometric ratio at which the phosphoric acid and ammonia can be converted into ammonium phosphate. It is characterized in that the reaction at a temperature of 50-110 ℃, a stirring speed of 15-40rpm, by the method of the present invention can effectively recycle a large amount of reaction waste generated in the semiconductor etching process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100550829-B1
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priorityDate 2004-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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