http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100436050-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2001-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100436050-B1 |
| titleOfInvention | Method of fabricating capacitor |
| abstract | The present invention is to provide a method for manufacturing a capacitor that can improve the electrical properties by minimizing the interface defect between the lower electrode and the dielectric film due to the inclusion of impurities such as a polymer during electrochemical deposition, the present invention for Forming a capacitor lower electrode by using electrochemical deposition; Wet cleaning to remove impurities from the lower electrode surface; Forming a dielectric layer on the lower electrode; And it provides a capacitor manufacturing method comprising the step of forming an upper electrode on the dielectric layer.n n n In addition, the present invention comprises the steps of forming a seed layer on the substrate; Forming a capacitor sacrificial layer on the seed layer; Selectively etching the capacitor sacrificial layer to expose a portion of the seed layer; Forming a lower electrode on the exposed seed layer by the electrochemical deposition; Removing the sacrificial layer; Etching the seed layer exposed by removing the sacrificial layer; Wet cleaning to remove impurities on the lower electrode surface and etching residues of the seed layer; Forming a dielectric layer on the lower electrode; And it provides a capacitor manufacturing method comprising the step of forming an upper electrode on the dielectric layer. |
| priorityDate | 2001-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.