http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100434713-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63056d5c3712198658c5ffff49f840df |
| publicationDate | 2004-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100434713-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention discloses a method for manufacturing a semiconductor device. A method of manufacturing a semiconductor device according to the present invention includes forming a first IMO on a semiconductor substrate on which a lower metal wiring is formed, planarizing the first IMO, and forming a second on the planarized first IMO. Forming an IMO, forming a via hole by photo-etching the second and first IMO to expose the lower metal wiring, and forming an upper metal wiring on the via hole and a second IMO adjacent thereto Characterized in that it comprises a. |
| priorityDate | 1996-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.