| abstract |
The flip chip semiconductor device includes a semiconductor chip having a plurality of pad electrodes disposed on a surface thereof. The solder electrode is bonded to each pad electrode and the metal post is bonded to each solder electrode. The surface of the semiconductor chip on the side provided with the pad electrode is covered with an insulating resin layer, and all of the pad electrode and solder electrode and part of the metal post are embedded in the insulating resin layer. The remaining portion of the metal post protrudes from the insulating resin layer to form a protrusion. Next, an external solder electrode is formed to cover the protrusion. The external solder electrodes are arranged in a matrix on the insulating resin layer. The height of the protrusion is 7 to 50% of the distance from the end of the outer solder electrode to the surface of the insulating resin layer. |