http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100427118-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B25H1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B25H1-00 |
| filingDate | 1996-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100427118-B1 |
| titleOfInvention | Heat treatment jig and its manufacturing method |
| abstract | The present invention relates to a heat treatment jig made of a silicon carbide material in which a SiC film is formed by a CVD method on a silicon carbide substrate impregnated with silicon, wherein the silicon carbide substrate has a surface surface portion of a substrate within 200 μm in contact with the SiC film. In the case of observing and measuring at a magnification of 400 times using, the pores having a diameter of 2 μm or more do not exist in the surface layer portion. In the method for manufacturing the heat treatment jig, in forming a silicon carbide film on the surface of a silicon carbide substrate impregnated with silicon, a raw material compound for forming a silicon carbide film is introduced to a temperature of 1000 to 1290 ° C under an inert atmosphere. , To form a silicon carbide film at a pressure of 500 to 760 Torr. According to the method of the present invention, it is possible to provide a heat treatment jig having excellent heat cycle characteristics and heat shock resistance suitable as a heat treatment member for semiconductor manufacturing. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101138440-B1 |
| priorityDate | 1995-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.