http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100426897-B1

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filingDate 2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100426897-B1
titleOfInvention Fabrication and structure of solder terminal for flip chip packaging
abstract The solder terminal of the present invention comprises a lower metal adhesive layer 60, a thermal diffusion barrier layer 90 on the adhesive layer, and a solder bonding layer 80 thereon. The metal adhesive layer 60 is made of Al or an alloy thereof, and the thermal diffusion barrier layer 90 is made of TiW or Ti, W and an alloy layer thereof, and the solder bonding layer 80 is made of NiV or Ni-based alloy. .n n n In the solder terminal manufacturing method of the present invention, the step of sequentially depositing the metal adhesive layer 60, the thermal diffusion barrier layer 90 and the solder bonding layer 80, by applying a photosensitive material on a series of metal layers and solder bumps after exposure Etching the region to be formed, plating the solder, chemically etching only the solder bonding layer 80 (NiV or Ni-based alloy) of the series of metal layers, and melting and reacting and sphering the solder. And chemically etching the thermal reaction layer 90 and the metal adhesive layer 60.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101524044-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831407-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10074788-B2
priorityDate 2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 52.