| abstract |
In the flip chip type semiconductor device, a plurality of pad electrodes 12 and 32 are formed on the semiconductor substrates 11 and 31. An insulation stress absorbing resin layer 14, 34, 34 'made of a thermosetting resin is formed on the semiconductor substrate and has openings 14, 34a corresponding to the pad electrodes. A plurality of flexible conductive members 16, 21, 36, 38, 51, 61 are filled in the openings. A plurality of metal bumps 17 are formed on the flexible conductive layer. |