| abstract |
In the semiconductor device of the present invention, an insulating layer formed on the surface of the semiconductor substrate, a wiring groove pattern formed in the insulating layer, a conductive diffusion preventing layer formed on the inner surface of the wiring groove, and a conductive diffusion preventing layer are formed on the inner surface thereof. And a Cu-based wiring layer formed in a provided wiring groove, wherein the Cu-based wiring includes sulfur in a ratio ranging from 10 -3 atomic% to 1 atomic%. |