http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100420621-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2001-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100420621-B1 |
| titleOfInvention | process for the surface polishing of silicon wafers |
| abstract | The present invention provides a method for polishing a surface of a silicon wafer, comprising continuously supplying an alkaline abrasive wear agent having a SiO 2 component while continuously polishing the silicon wafer on at least two different polishing plates covered with an abrasive cloth to remove the polishing. The amount of silicon removed on the first polishing plate is significantly higher than that on the second polishing plate, and the total amount of silicon removed is not more than 1.5 占 퐉.n n n Initially, an abrasive wear agent 1a, then a mixture of abrasive wear agent 1b and at least one alcohol, and finally ultrapure water 1c are added to the first abrasive plate, and the abrasive wear agent 2a and A mixture of at least one alcohol and then ultrapure water 2b is added to the second polishing plate. |
| priorityDate | 2000-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.