http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100418379-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0216 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 |
| filingDate | 2001-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100418379-B1 |
| titleOfInvention | Thin Film Solar Cell Using a Surface Modified Indium Tin Oxide and Method for Preparing the Same |
| abstract | The present invention relates to a thin film photovoltaic cell using an indium tin oxide film (ITO) surface modification and a method of manufacturing the same. The photovoltaic cell of the present invention is a front electrode having a high light transmittance on a glass substrate and a surface modification layer formed on an upper layer of the front electrode. And the p-type semiconductor layer and the p-type semiconductor layer, which are in contact with the surface modification layer and have a wide band gap energy, which act as a light transmitting layer, form a p / n junction with the n-type semiconductor layer, and act as a light absorption layer. It is characterized in that it consists of a rear electrode which is in ohmic contact with the semiconductor layer, so that the surface energy of the indium tin oxide film, which is the front electrode, increases the surface energy and decreases the contact angle, thereby improving the adhesion to the n-type semiconductor layer, thereby increasing the light transmittance of the n-type semiconductor. And surface flatness and surface shape can be improved, and in particular, it acts as a buffer film at the junction of the front electrode and the n-type semiconductor layer There are excellent effects that can significantly reduce the defect increases the efficiency of the photovoltaic cell. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101134568-B1 |
| priorityDate | 2001-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.