| abstract |
The present invention provides a semiconductor device, comprising: a semiconductor substrate, at least one pad electrode provided on the semiconductor substrate, a passivation film provided on the semiconductor substrate, at least one pad electrode, and a passivation film provided on the at least one pad electrode; An insulating resin stress buffer layer having at least one opening located over at least a portion, and at least one land portion provided over the insulation resin stress buffer layer and electrically connected to the at least one pad electrode, wherein at least one top surface of the at least one land portion is at least one At least one land portion electrically connected to at least one bump located above the land portion of the at least one land portion, wherein the at least one land portion and the passivation film are separated from each other by an insulating resin stress buffer layer. |