http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100415756-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76822 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 |
| filingDate | 2001-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100415756-B1 |
| titleOfInvention | Method of fabricating semiconductor device using a laser |
| abstract | Provided are methods for removing photoresist patterns and polymers using laser beams. This method forms a material film on the semiconductor substrate and a photoresist pattern on the material film. The material layer is dry etched using the photoresist pattern as an etching mask. Subsequently, a laser beam is irradiated on the entire surface of the semiconductor substrate having the dry etched material film to completely remove the photoresist pattern and the polymer generated during the dry etching of the material film. |
| priorityDate | 2001-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.