http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100415755-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 2001-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100415755-B1 |
| titleOfInvention | Method of fabricating semiconductor device using laser |
| abstract | A method of manufacturing a semiconductor device using a laser is provided. This method includes preparing a conductor film. The surface of the conductor film is smoothed by irradiating a laser beam on the entire surface of the conductor film. The conductor film corresponds to a silicon wafer, a metal film, a doped polysilicon film or a metal silicide film. In particular, if the conductor film is planarized by a chemical mechanical polishing process before the laser beam is irradiated, the surface roughness of the conductor film is further improved. |
| priorityDate | 2001-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.