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filingDate 2000-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2003-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100408517-B1
titleOfInvention Manufacturing method for ferroelectric thin film using sol-gel process
abstract The present invention relates to a method for producing a ferroelectric thin film using a sol-gel process. A method of manufacturing a ferroelectric thin film by a sol-gel process, comprising: dissolving a Pb precursor and stabilizing a Ti precursor and a Zr precursor; Preparing a ferroelectric solution by stirring and hydrolyzing the dissolved Pb precursor, the stabilized Ti precursor, and the Zr precursor; Forming the ferroelectric thin film on the substrate to the ferroelectric solution prepared by providing a method for producing a ferroelectric thin film by a sol-gel process, it can increase the stability and durability of the solution for producing a ferroelectric thin film In addition, it is possible to greatly improve the film quality during thin film manufacturing.
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type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 42.