http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100400242-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D7-63
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D5-00
filingDate 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100400242-B1
titleOfInvention Organic anti-reflective polymer and preparation method thereof
abstract The present invention prevents the reflection of the underlying layer in the ultrafine pattern formation process using the photoresist for 248 nm KrF and 193 nm ArF lithography during the semiconductor device manufacturing process and removes the sine wave in the thickness change of ArF light and photoresist itself. The present invention relates to an organic anti-reflective polymer and a method for synthesizing the same, and the present invention also relates to an anti-reflective composition containing such an organic anti-reflective polymer, an anti-reflective coating using the same, and a method for producing the same. When the polymer according to the present invention is used as the reflective ring film in the ultrafine pattern forming process of the semiconductor manufacturing process, the stable ultrafine pattern of 64M, 256M, 1G, 4G, and 16G DRAMs is removed by eliminating the CD variation caused by the lower layer. It can form, and can increase the yield of a product.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101713254-B1
priorityDate 1998-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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