http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100396966-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-904 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 1996-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100396966-B1 |
| titleOfInvention | Manufacturing Method of Thin Film Transistor Device |
| abstract | A manufacturing method of a thin film semiconductor device basically includes a film forming step of forming a semiconductor thin film on an insulating substrate, and moving an energy beam having a linear irradiation area relatively along the scanning direction orthogonal to the irradiation area. Irradiating to crystallize the semiconductor thin film. The crystallized semiconductor thin film is used as a channel region, and a thin film transistor having a gate electrode intersecting with the channel region is integrally formed. At this time, in the irradiation step, the energy beam is moved in the scanning direction parallel to the channel region and orthogonal to the gate electrode. A manufacturing method of a thin film semiconductor device includes a film forming step of forming a basic structure of a thin film transistor comprising an amorphous semiconductor thin film and a metallic gate electrode laminated on opposite sides with a gate insulating film interposed therebetween on a transparent substrate; A heating step of irradiating the hot wires from the gate electrode side, absorbing them into the metallic gate electrode, and locally or intensively auxiliary heating the region of the semiconductor thin film opposite the gate electrode through the gate insulating film; And crystallization which is performed simultaneously with the heating step, by irradiating an energy beam from the semiconductor thin film side opposite to the gate electrode to convert the semiconductor thin film in the auxiliary heated region from amorphous to polycrystalline, thereby forming an active layer of the thin film transistor. Steps. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101287314-B1 |
| priorityDate | 1995-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 |
Total number of triples: 18.