http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100396883-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| filingDate | 2000-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100396883-B1 |
| titleOfInvention | Slurry for chemical mechanical polishing and manufacturing method of copper metal interconnection layer using the same |
| abstract | The present invention relates to a slurry used for chemical mechanical polishing of copper metal wiring and a method for producing copper metal wiring using the same. The present invention provides a chemical mechanical polishing slurry comprising an oxidizing agent, a pH adjusting agent, a chelating reagent and deionized water and containing no abrasive. In another aspect, the present invention provides a method for forming a semiconductor device, the method comprising: forming a recessed region having a predetermined wiring shape in an interlayer insulating film formed on a semiconductor substrate; forming a barrier film along a step in front of the resultant product in which the recess region is formed; Forming a copper seed layer along a step on the surface thereof; and exposing the barrier layer by chemical mechanical polishing using the slurry so that the copper seed layer remains only in the recess region. to provide. |
| priorityDate | 2000-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.