http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100390991-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100390991-B1 |
| titleOfInvention | Forming method for photoresist pattern of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a photosensitive film pattern of a semiconductor device. T-top phenomenon on the photoresist pattern by inhibiting ammonia or NMP (N-Methyl-2-pyrrolidone) adsorbed on the photoresist surface from reacting with H + in the photoresist layer without independent air conditioning by separate chemical filter. By preventing this from happening, the reproducibility of the pattern is improved, and accordingly, the miniaturization of semiconductor elements and the process stability are improved. |
| priorityDate | 2001-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.