http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100390908-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-53022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-945 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100390908-B1 |
| titleOfInvention | Mask for evaluating selective epitaxial growth process |
| abstract | The present invention discloses a mask for evaluating the epitaxial growth process, wherein the mask of the present invention discloses selective epitaxial growth for evaluating the growth pattern of the single crystal silicon grown by the selective epitaxial growth process according to the shape of the exposed silicon region. In the process evaluation mask, used for patterning the insulating film on the wafer, divided into four regions, the first region is provided with a mask pattern for resistance measurement for measuring the sheet resistance of the grown single crystal silicon, the first region diagonal A mask pattern for selectivity evaluation for evaluating the selectivity of single crystal silicon growth is provided in the second region of, and the mask for verifying the facet generation having different shapes for evaluating the occurrence of facet in the grown single crystal silicon. Patterns are provided, and in the upper portion of the fourth region, Mask patterns for loading effect verification having different shapes for evaluating the growth behavior of the silicon are provided, and in the fourth region portion below the loading effect verification pattern, uniformity evaluation for evaluating the uniformity of the grown single crystal silicon is performed. Characterized in that the mask pattern is provided. |
| priorityDate | 2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 26.