http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100388379-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1996-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100388379-B1 |
| titleOfInvention | High voltage breakdown MOS transistor and its manufacturing method |
| abstract | To improve the electrostatic breakdown capacity of MOS transistors.n n n In a high breakdown voltage MOS transistor, a pair of first diffusion layers 203 of a second conductivity type (N type) and a first diffusion layer (N) of a pair of second conductivity type (N type) are formed on a semiconductor substrate 201 of a first conductivity type (P type). A gate oxide film formed in the second diffusion type (N-type) and sandwiched with the second diffusion layer 210 having a higher concentration than the first diffusion layer 201 and facing the first diffusion layer 203. 208 and a gate region comprising a gate electrode 209, the interval between the diffusion layers of the first diffusion layer 203 facing each other is provided in a deep region narrower than the interval on the surface. |
| priorityDate | 1995-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5462311 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559585 |
Total number of triples: 16.