http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100383702-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76281 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1999-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100383702-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | Field silicon oxide film layers 5a and 5b used for circuit element separation are formed. Ions are implanted only into the field silicon oxide layer 5a thicker than the field silicon oxide layer 5b. The field silicon oxide layers 5a and 5b are etched at different speeds to form silicon layers 2a and 2b having different thicknesses, and are simultaneously separated from each other without removing any portion of the silicon oxide layer 1 as a base layer. do. |
| priorityDate | 1999-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.