http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100382719-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2000-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100382719-B1 |
| titleOfInvention | Semiconductor device comprising ferroelectric capacitor and method of manufacturing the same |
| abstract | Disclosed are a semiconductor device including a ferroelectric capacitor and a method of manufacturing the same. One aspect of the present invention provides a semiconductor device using a triple film structure of a metal film / metal oxide film / metal film as an electrode of a capacitor. A conductive plug electrically connected to the semiconductor substrate is formed by passing through the insulating film formed on the semiconductor substrate. A first lower metal film of iridium is preferably formed which is electrically connected to the conductive plug via an adhesive film and serves to prevent oxygen diffusion into the conductive plug. A lower metal oxide film of iridium oxide is preferably formed on the first lower metal film, and preferably a second lower metal film of platinum is formed to induce interfacial matching to form the lower electrode film of the capacitor. Preferably, a ferroelectric film of PZT is formed. A first upper metal film of platinum is formed on the ferroelectric film to induce interfacial matching, and the interfacial matching is induced by heat treatment at a temperature above the crystallization temperature of the ferroelectric film. After the upper metal oxide film of iridium oxide is preferably formed on the first upper metal film, the second upper metal film of iridium is preferably formed to prevent material diffusion, thereby forming the upper electrode film. An upper insulating film is formed on the upper electrode film, and a wiring is formed therethrough to be electrically connected to the upper electrode film. The lower metal oxide film and the upper metal oxide film are introduced to supply oxygen to compensate for oxygen depletion at the interface of the ferroelectric film. |
| priorityDate | 2000-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.