| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-927
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49866 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C5-06 |
| filingDate |
2000-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100379128-B1 |
| titleOfInvention |
Substrate for mannfacturing the environmentally favorable semiconductor device using three element alloy |
| abstract |
The present invention relates to a substrate for manufacturing an environmentally friendly semiconductor device using a three-way alloy, comprising: a patterned copper-based and nickel alloy-based substrate; A first layer including a nickel layer formed to a thickness of 10 to 300 µin on at least an upper surface of a lead portion of the patterned copper-based and nickel alloy-based substrate; And a final layer having a ternary alloy layer including gold / silver / selenium formed at a thickness of 3 to 50 μin on the nickel layer and an upper surface thereof. The substrate for manufacturing a semiconductor device of the present invention is made by binding and not using tin / lead as in the prior art, and has high tensile and environmental friendliness, and can be used as a structural joint in the field of electronic engineering and related parts industry. |
| priorityDate |
2000-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |