http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100378779-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N9-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-374 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335 |
| filingDate | 1999-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100378779-B1 |
| titleOfInvention | Solid state image sensor |
| abstract | In the nonvolatile memory transistor included in the substrate voltage setting circuit of the solid state imaging device peripheral circuit, when light enters, the charge trapped in the insulating film under the gate electrode obtains energy and is released from the capture level, and the threshold of the nonvolatile memory transistor is obtained. There was a problem that the voltage changed and the substrate voltage set once changed. Therefore, in the present invention, a film or a film of any kind is formed by embedding a color filter such as a plurality of color filters formed on the photoelectric conversion portion on the nonvolatile memory transistor to form a light shielding film. Incident light is prevented from entering the volatile memory transistor, thereby making the substrate voltage setting circuit stable. |
| priorityDate | 1998-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015 |
Total number of triples: 24.