http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100378184-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate | 2000-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100378184-B1 |
| titleOfInvention | Silicon wafer having controlled distribution of defects, process for the preparation of the same and czochralski puller for manufacturing monocrystalline silicon ingot |
| abstract | Disclosed is a silicon wafer having a denude zone secured near the surface of a wafer and at the same time having a defect distribution controlled to have a sufficient gathering effect in the bulk region and a manufacturing process thereof. In the silicon wafer of the present invention, the oxygen precipitates, which are intrinsic gathering sites, have a constant vertical distribution, that is, the concentration profile of the oxygen precipitates from the front side to the rear side of the wafer has a first peak and a second peak at predetermined depths from the front side and the rear side of the wafer, respectively. Indicates. The denude zone is formed before reaching the first and second peaks, respectively, from the front and back surfaces of the wafer. The concentration profile of the oxygen precipitate in the bulk region of the wafer between the first peak and the second peak has a concave shape. In order to obtain such an oxygen precipitate distribution, a rapid heat treatment is performed under a mixed gas of nitrogen + argon or hydrogen gas in the donor killing process during wafering. |
| priorityDate | 1999-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.