http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100377833-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2001-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100377833-B1 |
| titleOfInvention | Semiconductor device with borderless contact structure and method of manufacturing the same |
| abstract | Disclosed are a semiconductor device having a borderless contact structure and a method of manufacturing the same. Gate electrodes are formed on the active region of the semiconductor substrate separated by the field oxide film into the active region and the field region. An etching protection layer is formed on the gate electrodes and the semiconductor substrate. Spacers made of a material having an etch selectivity and an etch selectivity are formed on the etch protection layers on both sides of each gate electrode. After the source / drain ion implantation is performed using the gate electrodes including the spacers as a mask, the spacers are removed to secure a space in which the first contact hole is to be formed between the gate electrodes. An etch stop layer and an interlayer insulating film are sequentially formed on the entire surface of the resultant, and then etched to partially expose the surface of the semiconductor substrate between the gate electrodes and a portion of the surface of the semiconductor substrate and the field oxide film adjacent to the field oxide film. A second contact hole for borderless contact is formed to expose the surface. By sufficiently securing the bottom critical dimension of the first contact hole formed between the gate electrodes, it is possible to prevent the first contact hole from being better-opened. |
| priorityDate | 2001-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.