http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100377509-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2000-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100377509-B1 |
| titleOfInvention | Method of forming metal interconnects of ZnO semiconductor |
| abstract | A method for forming metal wiring of a zinc oxide semiconductor is disclosed. The present invention seats a substrate on which a zinc oxide semiconductor is deposited on a susceptor in a reactor, and forms a plasma containing hydrogen in the reactor so that the pressure in the reactor is 1 mTorr to 1 Torr and the temperature is 0 to 400 ° C. The surface of the zinc oxide semiconductor is exposed to plasma, and then metal wiring is formed. At this time, any one selected from the group of inert gases consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn) to the gas containing hydrogen. It is preferable to further include or further include a mixed gas including at least any one of them. According to the present invention, not only a low specific contact resistance can be obtained by a simple method but also excellent optical characteristics can be obtained. In addition, the present invention does not require a high temperature process, so that the performance degradation of the device which can be caused by the high temperature heat treatment used in the conventional compound semiconductor can be avoided. |
| priorityDate | 2000-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.