http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100377180-B1

Outgoing Links

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filingDate 2001-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100377180-B1
titleOfInvention Method for fabricating ferroelectric memory device
abstract The present invention relates to a method of manufacturing a ferroelectric memory device which reduces the burden on the etching process of the storage electrode and the plate electrode and to highly integrate the ferroelectric capacitor module, comprising the steps of sequentially forming a seed layer and a sacrificial film on a semiconductor substrate; Selectively etching the sacrificial layer to form a ring-shaped sacrificial layer pattern, simultaneously forming first and second electrodes on the exposed seed layer after the sacrificial layer pattern is formed using an electrochemical deposition method, and the sacrificial layer pattern Removing the sacrificial layer, etching the seed layer exposed after removing the sacrificial layer pattern, and forming a ferroelectric thin film on the entire surface including the first and second electrodes by a spin-on method.
priorityDate 2001-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 23.