http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100375090-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B13-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2000-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100375090-B1 |
| titleOfInvention | Crystallization of amorphous-Silicon film using an Excimer-Laser |
| abstract | end. The technical field to which the invention described in the claims belongs:n n n n Crystallization Method of Amorphous Silicon Using Excimer Lasern n n n I. The technical problem the invention is trying to solve:n n n n In the conventional method of crystallizing amorphous silicon using an excimer laser, it is difficult to achieve uniformity and coarsening of amorphous silicon with a Top Hat shape laser beam, and a method of increasing the shot-to-shot overlap ratio is a substrate-based method. Increasing the irradiation time per sheet to increase the expensive use of the excimer laser has a problem of lowering the yield of the product.n n n n All. The gist of the solution of the invention:n n n n In the present invention, a first filter is formed by forming a filter on which a beam stop is formed on a homogenizer of an excimer laser, to completely melt the amorphous silicon, and to melt the portion near the interface of the amorphous silicon. In addition, by providing a stepped beam shape having a two top hat area, the grain size can be uniformly coarsened even if the overlap ratio between shots is reduced, thereby reducing the irradiation time of one substrate to 25 to 20 s / sheet. There is an advantage to increase the yield of the product. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101884890-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130018014-A |
| priorityDate | 2000-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 130.