http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100374737-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 1997-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100374737-B1 |
| titleOfInvention | METHOD FOR FORMING TRANSISTOR, CIRCUIT CONTAINING THE TRANSISTOR, METHOD FOR PRODUCING ACTIVE MATRIX SUBSTRATE, METHOD FOR MANUFACTURING DISPLAY DEVICE, |
| abstract | V GS -I is a thin film transistor having a structure capable of reducing deterioration of DS characteristics. This thin film transistor 16 has a source region 17, a drain region 18 and a gate electrode 19 which are made of an N-type impurity diffusion region and the region immediately below the gate electrode 19 is a channel region 30 have. The source region 17 and the drain region 18 are provided with a plurality of contact holes 20, The source electrode 21 and the drain electrode 22 are connected to each other. In the channel region 30, a P-type impurity diffusion region 23 is formed at a plurality of places at regular intervals. |
| priorityDate | 1996-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.