http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100370695-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-042 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D9-30 |
| filingDate | 1995-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100370695-B1 |
| titleOfInvention | Silicon Wafer Cleaning Liquid and Silicon Wafer Cleaning Method |
| abstract | The present invention relates to a silicon wafer cleaning fluid containing HNO 3 35 to 65% by weight, HF 0.05 to 0.5% by weight, HCl 0.05 to 0.5% by weight, surfactant 0.002 to 0.1% by weight and water, and the surface of the silicon wafer. A method of cleaning a silicon wafer comprising treating with a cleaning fluid is provided. According to the present invention, the silicon wafer surface can be etched by simply adjusting the etching amount to several tens of kPa, especially about 20 to 30 kPa, and the surface smoothness is not impaired. In addition, the contamination rate by gold and other heavy metals of about 10 12 atoms / cm 2 can be reduced to 1/100 or less. |
| priorityDate | 1995-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.