| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fad0246171945d5e4957c9be0b37a2f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
1999-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa39d90fb8180723b70844f2ed0589a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8c9411634b8650a5d4778bc1d87245c |
| publicationDate |
2003-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100370305-B1 |
| titleOfInvention |
Method of manufacturing active matrix device |
| abstract |
The present invention provides a technique for preventing semiconductor devices from being destroyed by pulsed high potentials applied by plasma without adding any particular manufacturing step under manufacture. A first wiring extending to the gate electrode of the thin film transistor is formed. The first insulating film is formed on the first wiring. A second wiring connected to the source region of the thin film transistor is formed on the insulating film. The second insulating film is formed on the second wiring. Next, a conductive pattern is formed on the second insulating film. The discharge pattern is formed in the first and / or second wirings, and the first and / or second wirings are cut simultaneously with the formation of the conductive pattern. |
| priorityDate |
1995-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |