http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100367734-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2000-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100367734-B1 |
| titleOfInvention | Method for fabricating an interconnection layer for semiconductor device |
| abstract | The present invention relates to a wiring forming method of a semiconductor device, and provides a wiring forming method of a semiconductor device that can prevent the diffusion of copper ions into the insulating film during the cleaning process before forming the upper copper wiring to increase the manufacturing reliability of the semiconductor device For the purpose ofn n n A method for manufacturing a wiring of a semiconductor device of the present invention includes the steps of forming a first insulating film on a semiconductor substrate, forming a trench by partially etching the insulating film, and forming a first barrier film on the inner wall and the bottom of the trench. Forming a lower copper wiring in the trench, forming a second barrier film on an upper surface of the lower copper wiring, and forming a second insulating film on the upper surface of the second barrier film and the first insulating film. Selectively etching the second insulating layer to form a contact hole in a predetermined portion of the upper surface of the lower copper wiring to expose the second barrier layer; and sputtering and cleaning the inside of the contact hole with argon ions; And forming a third barrier film on the inner wall and the bottom of the contact hole, and forming an upper copper wiring inside the contact hole. |
| priorityDate | 2000-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.