http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100366706-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2000-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100366706-B1 |
| titleOfInvention | Method for fabricating a GaN single crystal substrate |
| abstract | The present invention relates to a method for producing a gallium nitride single crystal substrate.n n n The present invention comprises the steps of forming a gallium nitride (GaN) film on the entire surface of the sapphire substrate; Heating the sapphire substrate in the range of 900 to 1000 ° C .; And separating the gallium nitride film from the sapphire substrate by irradiating a laser to a rear surface of the heated sapphire substrate.n n n Further, before and after forming a gallium nitride (GaN) film on the front surface of the sapphire substrate, forming a silicon oxide film (SiO 2 ) on the rear surface of the sapphire substrate and removing the silicon oxide film on the back surface of the sapphire substrate, respectively. In addition. Therefore, a high quality gallium nitride substrate without cracks can be obtained. |
| priorityDate | 2000-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.