http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100366352-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2000-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100366352-B1 |
| titleOfInvention | Formation method of oxide for solar cell using rapid thermal process |
| abstract | The present invention relates to a method for forming an oxide film for a solar cell using a rapid heat treatment, and an object thereof is to form a silicon oxide film for a solar cell using a rapid heat treatment device with a low metal impurity and a high degree of bonding between silicon and oxygen. To this end, in the method of forming an oxide film using the rapid heat treatment according to the present invention, using a rapid heat treatment apparatus equipped with an ultraviolet lamp and an infrared lamp, the silicon wafer is first cleaned by irradiating with ultraviolet light and irradiating ultraviolet light, and then cleaning. It is characterized by forming a solar cell oxide film by injecting chlorine source and oxygen while irradiating infrared light on the silicon wafer. |
| priorityDate | 2000-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.