| abstract |
A method of fabricating bond pads 20 on a semiconductor device that reduces the intermetallic compound growth between the metallization layer and the bonding layer is disclosed. The metallization layer 26 is first deposited on the substrate 22. Subsequent steps include depositing a barrier layer 28 on the metallization layer 26, masking a portion of the barrier layer 28, and the barrier layer 28 and the metallization layer. Etching 26 is included. Etching of barrier 28 and metallization layer 26 is carried out using a barrier layer mask as a mask for both barrier layer 28 and metallization layer 26. Additional steps include conformal deposition of the non-conductive layer 24 over the barrier layer 28, masking a portion of the non-conductive layer 24 and etching the non-conductive layer 24. It includes the steps. Etching the non-conductive layer 24 forms an exposed region of the barrier layer 28. A later step of this method involves forming the bond layer 30 on the exposed area of the barrier layer 28, where one possible formation method uses an electrolysis process. Thus, the bond layer 20 having the cap metallization layer is formed in two masking and etching steps. Such bond pads withstand ambient temperatures up to approximately 200 ° C. |