http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100365061-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-822
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 1998-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2003-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100365061-B1
titleOfInvention Semiconductor device and semiconductor device manufacturing method
abstract The semiconductor device has a continuously varying portion of the first film 44,1032, such as a barrier film used in conductive structures such as interconnects and conductive plugs. The continuously varying portions 44 and 1032 include a first element and a second element, such as a refractory metal and nitrogen. Continuous changes have varying concentrations of the first element closer to the more conductive second films 46, 1054, and 1064. Another semiconductor device includes a first conductive film and a second conductive film 1054 and 1065, which are mostly made of copper. The first conductive film has a first portion, a second portion, and a third portion. The second portion is located between the first portion and the third portion and the third portion is located closest to the second conductive layers 1054 and 1064. The nitrogen concentration of the second portion is greater than the nitrogen concentration of the first portion and the third portion Which is higher than the nitrogen concentration of the semiconductor device. Processes for manufacturing semiconductor devices are also described.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101067364-B1
priorityDate 1997-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415877653
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447731521
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID522684
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID73706
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419531969
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID27099
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419516820
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID213013
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559356
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID13568
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16072293
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526467
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341

Total number of triples: 32.