http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100359489-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2000-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100359489-B1 |
| titleOfInvention | Method of fabricating gate dielectric for use in semiconductor device |
| abstract | The present invention includes the steps of forming a metal oxide on a silicon substrate, a nitriding treatment step containing a nitrogen component in the metal oxide, and a reoxidation step of oxidizing the metal oxide containing the nitrogen component. do. Here, the metal oxide may be ZrO 2 or HfO 2 , La 2 O 3 , Al 2 O 3 or Ta 2 O 5 , and ZrSi x O y , HfSi x O y , LaSi x O y , AlSi x O y or TaSi x O y may be used. The nitriding treatment may be performed by heat-treating the resultant product on which the metal oxide is formed in a nitrogen-containing atmosphere, or performing plasma treatment by exposing the metal oxide to a plasma atmosphere containing nitrogen, or ionizing a nitrogen component to the metal oxide. Can be done by injection. According to the present invention, an increase in the effective thickness and leakage current by the high temperature subsequent heat treatment process can be significantly reduced by performing the nitriding treatment and reoxidation process after forming the metal oxide film. |
| priorityDate | 2000-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.