http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100359246-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1999-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100359246-B1 |
| titleOfInvention | Method for fabricatig semiconductor device that having stack type capacitor |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having a stacked capacitor, wherein a logic circuit is formed when a capacitor in a RAM cell region is formed so as to reduce a step difference between a RAM cell region and a logic circuit region which are deepened as the stack height of the capacitor increases. Pattern formation of the layers formed after the capacitor is formed by preserving the interlayer insulating film formed on the top of the region to reduce the step difference between the two regions and manufacturing the multilayer interconnection wiring of the logic circuit region together in the capacitor manufacturing process of the RAM cell region; The effect that the interconnect wiring of a logic circuit area | region can be formed easily can be acquired. |
| priorityDate | 1999-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5895239-A |
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 21.