Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D309-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-757 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C67-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D309-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-757 |
filingDate |
1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2003-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b9fac02403454d2db150938beddd852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de6b151024df9e08e244b7c1d7413f78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec72e12d4077c325ad02dc88ccb08bb3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_553eaaf266ef24d8ed2e7db69d5d555a |
publicationDate |
2003-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100354871-B1 |
titleOfInvention |
Copolymer resin and its manufacturing method and photoresist using resin |
abstract |
The present invention relates to a copolymer for photoresist used in far-infrared light sources such as KrF or ArF, a method for producing the same, and a photoresist composition containing the copolymer. The copolymer according to the present invention can be easily polymerized by conventional radical polymerization by introducing norbornyl (meth) acrylate units into the copolymer structure for photoresist, and has high transparency at 193 nm wavelength and increased etching resistance as well as Adhesion due to hydrophilic groups in the carbonyl group can be greatly increased and shows good resolution of 0.15 μm in actual patterning experiments. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014163332-A1 |
priorityDate |
1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |