http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100352816-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate | 2000-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100352816-B1 |
| titleOfInvention | Epitaxial structure of high-speed photodetector |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epitaxial structure for an ultrafast photodetector that reduces the effective mass of holes passing through an element in order to improve the speed characteristics in the photodetector.n n n In order to improve the speed characteristic of the photodetector, the n-type ohmic layer 3, which is a crystal layer of In 0.53 Ga 0.47 As, grown on a semi-insulating indium substrate 25 and a semi-insulating indium substrate 25 And an i-type light absorbing layer 2, which is a crystal layer of In x Ga 1-x As (x <0.53), grown on the n + -type ohmic layer 3, and In 0.53 Ga grown on an i-type light absorbing layer 2; Crystals of In 0.53 Ga 0.47 As grown on a pin type including a p + type ohmic layer 1, which is a 0.47 As crystal layer, a substrate 25 that is semi-insulating indium, and a substrate that is semi-insulating indium 25 The n + type ohmic layer 6 as a layer, the i type or n-type light absorbing layer 5 as a crystal layer of In x Ga 1-x As (x <0.53) grown on the n + ohmic layer 6, and i By presenting an epitaxial structure for a Schottky type ultrafast photodetector comprising an i-type or n-type Schottky layer (4), which is a crystal layer of In 0.52 Al 0.48 As, grown on a type or n-type light absorbing layer (2) There is an effect of improving the speed characteristic of the detector. |
| priorityDate | 2000-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.