http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100348996-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13458 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 1999-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100348996-B1 |
| titleOfInvention | A method of LCD |
| abstract | The present invention relates to an etching method for etching an ITO film constituting a pixel electrode of a liquid crystal display device. The present invention prevents damage to a lower metal film by an etchant of an ITO film, and also speeds up an etching rate to shorten a work process. The purpose of the present invention is to reduce the consumption of etchant by reducing the evaporation amount of the etchant by keeping the temperature of the etchant relatively low, and to reduce the exposure of harmful substances contained in the etchant to the worker.n n n In order to achieve the above object, the etching method of the ITO film of the present invention comprises the steps of depositing an ITO film over an insulating film or the like on a substrate on which at least Cr, Al, Mo, etc. are formed as a lower film,n n n Etching the amorphous ITO membrane with an oxalic acid ((COOH) 2 2H 2 O) etchant at 15 ° C. to 45 ° C.,n n n After etching the ITO film, the ITO film is annealed to crystallize. |
| priorityDate | 1999-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.