http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100345400-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1999-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100345400-B1 |
| titleOfInvention | A trench formation method with tick edge oxide |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a trench formation method used in isolation of a device, in the manufacture of capacitors and trench gates, in which the thickness of the oxide film grown in the trench corners is thicker than that of the conventional method. The present invention relates to a trench formation method for growing a uniform oxide film on the entire inner surface of a trench by growing it or growing a thicker thermal oxide film at a corner portion.n n n The present invention is to form a trench on the (100) silicon substrate and then wet etching the oxide film or nitride film in the upper corner portion of the trench corner by about 300 kPa to 3000 kPa and injecting heat at a high temperature of 1000 ° C to 1200 ° C to heat the inner wall of the trench and By rearranging the crystal planes of the corner parts, each of the rearranged planes has a different oxide growth rate. That is, in the trench corner portion, a (111) crystal plane having the fastest oxide film growth rate is formed, and an oxide film thicker than the other surface per unit time is grown. Therefore, by adjusting the thermal oxide growth time, it is possible to grow a uniform oxide film in the trench or a thicker oxide film in the trench corners. As a result, the electrical properties, especially the reliability of the device, can be greatly improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100474859-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100419873-B1 |
| priorityDate | 1999-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.