| abstract |
The pad metal film used to attach the conductor to an external connection consisting of a bumped or wired conductor may be formed by a reduced process. Thus, the semiconductor device is constructed so that the interconnect trench having a diameter of about 50 μm and a depth of about 2 μm is formed on a protective insulating film having a thickness of 3 to 4 μm formed on the semiconductor substrate, and the interconnect trench is composed of titanium nitride having a thickness of about 50 nm. The uppermost layer copper wiring is embedded through the first barrier metal film. In addition, a copper pad film is embedded in a substantially central region of the upper layer copper wiring through a second barrier metal film made of titanium nitride having a thickness of about 70 nm. |