http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100335495-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1999-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100335495-B1 |
| titleOfInvention | Simplified method of manufacturing isolation layer preventing divot generation |
| abstract | The present invention relates to a method of manufacturing a device isolation film that prevents the generation of the dibot and the process is simple. In the method of fabricating an isolation layer according to the present invention, a trench is formed in a semiconductor substrate using a photoresist pattern as an etching mask. Subsequently, a thermal oxide film is formed on the entire surface of the semiconductor substrate, and then a thin nitride film liner is formed on the thermal oxide film. The nitride film liner not only prevents oxidation of the trench sidewalls, but also functions as a planarization stop film. Then, the nitride film liner is separated from the trench upper corner portion or thinned while forming a gap fill insulating film filling the trench. Thereafter, the nitride film liner is used as the planarization stop film, and the gap fill insulating film is flattened by a chemical mechanical polishing method using a slurry containing a cerium oxide-based abrasive. Then, the nitride film liner used as the planarization stop film is removed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100631999-B1 |
| priorityDate | 1999-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.