| abstract |
The present semiconductor device includes a semiconductor substrate, a wiring pad formed on the semiconductor substrate, a barrier metal layer formed on the wiring pad, a low Ag 3 Sn intermetallic compound and an Ag 3 Sn intermetallic compound formed on the barrier metal layer. A projection electrode made of a melting point metal is provided. Moreover, the manufacturing method of a semiconductor element includes the process of forming a wiring pad on a semiconductor substrate, the process of forming a barrier metal layer on this wiring pad, the process of forming a metal layer containing Ag on this barrier metal layer, Forming a low melting metal layer containing Sn on the Ag-containing metal layer, and melting the low melting metal layer containing Sn to form a protruding electrode, and at the same time, a low melting point containing Ag and a metal layer containing Ag A step of forming an Ag 3 Sn intermetallic compound in the vicinity of the interface with the metal layer is provided. In this way, a highly reliable semiconductor element can be obtained using the solder which does not contain Pb. |